Beijing Silk Road Enterprise Management Services Co.,LTD

Beijing Silk Road Enterprise Management Services Co.,LTD

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BSZ086P03NS3EGATMA1

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BSZ086P03NS3EGATMA1

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Category :Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature :-
Vgs(th) (Max) @ Id :3.1V @ 105µA
Operating Temperature :-55°C ~ 150°C (TJ)
Package / Case :8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs :57.5 nC @ 10 V
Rds On (Max) @ Id, Vgs :8.6mOhm @ 20A, 10V
FET Type :P-Channel
Drive Voltage (Max Rds On, Min Rds On) :6V, 10V
Package :Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss) :30 V
Vgs (Max) :±25V
Product Status :Active
Input Capacitance (Ciss) (Max) @ Vds :4785 pF @ 15 V
Mounting Type :Surface Mount
Series :OptiMOS™
Supplier Device Package :PG-TSDSON-8
Mfr :Infineon Technologies
Current - Continuous Drain (Id) @ 25°C :13.5A (Ta), 40A (Tc)
Power Dissipation (Max) :2.1W (Ta), 69W (Tc)
Technology :MOSFET (Metal Oxide)
Base Product Number :BSZ086
Description :MOSFET P-CH 30V 13.5A/40A TSDSON
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P-Channel 30 V 13.5A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8
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