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Category :Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature :-
Vgs(th) (Max) @ Id :1.8V @ 250µA
Operating Temperature :-55°C ~ 150°C (TJ)
Package / Case :8-PowerVDFN
Gate Charge (Qg) (Max) @ Vgs :11.3 nC @ 10 V
Rds On (Max) @ Id, Vgs :18.6mOhm @ 10A, 10V
FET Type :N-Channel
Drive Voltage (Max Rds On, Min Rds On) :4.5V, 10V
Package :Tape & Reel (TR)
Drain to Source Voltage (Vdss) :30 V
Vgs (Max) :±25V
Product Status :Active
Input Capacitance (Ciss) (Max) @ Vds :580 pF @ 15 V
Mounting Type :Surface Mount
Series :-
Supplier Device Package :POWERDI3333-8
Mfr :Diodes Incorporated
Current - Continuous Drain (Id) @ 25°C :5.3A (Ta)
Power Dissipation (Max) :1W (Ta)
Technology :MOSFET (Metal Oxide)
Base Product Number :DMN3029
Description :MOSFET N-CH 30V 5.3A PWRDI333-8
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