Beijing Silk Road Enterprise Management Services Co.,LTD

Beijing Silk Road Enterprise Management Services Co.,LTD

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STP33N60M2

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STP33N60M2

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Category :Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature :-
Vgs(th) (Max) @ Id :4V @ 250µA
Operating Temperature :-55°C ~ 150°C (TJ)
Package / Case :TO-220-3
Gate Charge (Qg) (Max) @ Vgs :45.5 nC @ 10 V
Rds On (Max) @ Id, Vgs :125mOhm @ 13A, 10V
FET Type :N-Channel
Drive Voltage (Max Rds On, Min Rds On) :10V
Package :Tube
Drain to Source Voltage (Vdss) :600 V
Vgs (Max) :±25V
Product Status :Active
Input Capacitance (Ciss) (Max) @ Vds :1781 pF @ 100 V
Mounting Type :Through Hole
Series :MDmesh™ II Plus
Supplier Device Package :TO-220
Mfr :STMicroelectronics
Current - Continuous Drain (Id) @ 25°C :26A (Tc)
Power Dissipation (Max) :190W (Tc)
Technology :MOSFET (Metal Oxide)
Base Product Number :STP33
Description :MOSFET N-CH 600V 26A TO220
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N-Channel 600 V 26A (Tc) 190W (Tc) Through Hole TO-220
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