Beijing Silk Road Enterprise Management Services Co.,LTD

Beijing Silk Road Enterprise Management Services Co.,LTD

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BSH103,215

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BSH103,215

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Category :Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature :-
Vgs(th) (Max) @ Id :400mV @ 1mA (Min)
Operating Temperature :-55°C ~ 150°C (TJ)
Package / Case :TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs :2.1 nC @ 4.5 V
Rds On (Max) @ Id, Vgs :400mOhm @ 500mA, 4.5V
FET Type :N-Channel
Drive Voltage (Max Rds On, Min Rds On) :2.5V
Package :Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss) :30 V
Vgs (Max) :±8V
Product Status :Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds :83 pF @ 24 V
Mounting Type :Surface Mount
Series :-
Supplier Device Package :TO-236AB
Mfr :Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C :850mA (Ta)
Power Dissipation (Max) :540mW (Ta)
Technology :MOSFET (Metal Oxide)
Base Product Number :BSH103
Description :MOSFET N-CH 30V 850MA TO236AB
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N-Channel 30 V 850mA (Ta) 540mW (Ta) Surface Mount TO-236AB
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