Beijing Silk Road Enterprise Management Services Co.,LTD

Beijing Silk Road Enterprise Management Services Co.,LTD

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VN2210N2

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VN2210N2

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Category :Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature :-
Product Status :Active
Mounting Type :Through Hole
Vgs(th) (Max) @ Id :2.4V @ 10mA
Input Capacitance (Ciss) (Max) @ Vds :500 pF @ 25 V
Series :-
Vgs (Max) :±20V
Package :Bag
Supplier Device Package :TO-39
Rds On (Max) @ Id, Vgs :350mOhm @ 4A, 10V
Mfr :Microchip Technology
Operating Temperature :-55°C ~ 150°C (TJ)
FET Type :N-Channel
Drive Voltage (Max Rds On, Min Rds On) :5V, 10V
Power Dissipation (Max) :360mW (Tc)
Package / Case :TO-205AD, TO-39-3 Metal Can
Drain to Source Voltage (Vdss) :100 V
Current - Continuous Drain (Id) @ 25°C :1.7A (Tj)
Technology :MOSFET (Metal Oxide)
Base Product Number :VN2210
Description :MOSFET N-CH 100V 1.7A TO39
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N-Channel 100 V 1.7A (Tj) 360mW (Tc) Through Hole TO-39
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