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Category :Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature :-
Vgs(th) (Max) @ Id :4.9V @ 100µA
Operating Temperature :-55°C ~ 150°C (TJ)
Package / Case :8-PowerVDFN
Gate Charge (Qg) (Max) @ Vgs :36 nC @ 10 V
Rds On (Max) @ Id, Vgs :18mOhm @ 9.3A, 10V
FET Type :N-Channel
Drive Voltage (Max Rds On, Min Rds On) :10V
Package :Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss) :100 V
Vgs (Max) :±20V
Product Status :Active
Input Capacitance (Ciss) (Max) @ Vds :1510 pF @ 50 V
Mounting Type :Surface Mount
Series :HEXFET®
Supplier Device Package :PQFN (5x6) Single Die
Mfr :Infineon Technologies
Current - Continuous Drain (Id) @ 25°C :9.3A (Ta), 46A (Tc)
Power Dissipation (Max) :3.1W (Ta), 8.3W (Tc)
Technology :MOSFET (Metal Oxide)
Base Product Number :IRFH5053
Description :MOSFET N-CH 100V 9.3A/46A PQFN
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