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Category :Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature :-
Vgs(th) (Max) @ Id :4V @ 250µA
Operating Temperature :-55°C ~ 175°C (TJ)
Package / Case :TO-220-3
Gate Charge (Qg) (Max) @ Vgs :110 nC @ 10 V
Rds On (Max) @ Id, Vgs :36mOhm @ 22A, 10V
FET Type :N-Channel
Drive Voltage (Max Rds On, Min Rds On) :10V
Package :Tube
Drain to Source Voltage (Vdss) :100 V
Vgs (Max) :±20V
Product Status :Active
Input Capacitance (Ciss) (Max) @ Vds :1900 pF @ 25 V
Mounting Type :Through Hole
Series :HEXFET®
Supplier Device Package :TO-220AB
Mfr :Infineon Technologies
Current - Continuous Drain (Id) @ 25°C :42A (Tc)
Power Dissipation (Max) :160W (Tc)
Technology :MOSFET (Metal Oxide)
Base Product Number :IRF1310
Description :MOSFET N-CH 100V 42A TO220AB
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