Beijing Silk Road Enterprise Management Services Co.,LTD

Beijing Silk Road Enterprise Management Services Co.,LTD

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BUK9Y153-100E,115

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BUK9Y153-100E,115

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Category :Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature :-
Vgs(th) (Max) @ Id :2.1V @ 1mA
Operating Temperature :-55°C ~ 175°C (TJ)
Package / Case :SC-100, SOT-669
Gate Charge (Qg) (Max) @ Vgs :6.8 nC @ 5 V
Rds On (Max) @ Id, Vgs :146mOhm @ 2A, 10V
FET Type :N-Channel
Drive Voltage (Max Rds On, Min Rds On) :5V
Package :Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss) :100 V
Vgs (Max) :±10V
Product Status :Active
Input Capacitance (Ciss) (Max) @ Vds :716 pF @ 25 V
Mounting Type :Surface Mount
Series :Automotive, AEC-Q101, TrenchMOS™
Supplier Device Package :LFPAK56, Power-SO8
Mfr :Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C :9.4A (Tc)
Power Dissipation (Max) :37W (Tc)
Technology :MOSFET (Metal Oxide)
Base Product Number :BUK9Y153
Description :MOSFET N-CH 100V 9.4A LFPAK56
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N-Channel 100 V 9.4A (Tc) 37W (Tc) Surface Mount LFPAK56, Power-SO8
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