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Category :Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature :-
Vgs(th) (Max) @ Id :4V @ 250µA
Operating Temperature :-55°C ~ 150°C (TJ)
Package / Case :TO-220-3
Gate Charge (Qg) (Max) @ Vgs :11 nC @ 10 V
Rds On (Max) @ Id, Vgs :3Ohm @ 900mA, 10V
FET Type :P-Channel
Drive Voltage (Max Rds On, Min Rds On) :10V
Package :Tube
Drain to Source Voltage (Vdss) :200 V
Vgs (Max) :±20V
Product Status :Active
Input Capacitance (Ciss) (Max) @ Vds :170 pF @ 25 V
Mounting Type :Through Hole
Series :-
Supplier Device Package :TO-220AB
Mfr :Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C :1.8A (Tc)
Power Dissipation (Max) :20W (Tc)
Technology :MOSFET (Metal Oxide)
Base Product Number :IRF9610
Description :MOSFET P-CH 200V 1.8A TO220AB
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