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Category :Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature :-
Vgs(th) (Max) @ Id :2.4V @ 100µA
Operating Temperature :-55°C ~ 150°C (TJ)
Package / Case :TO-247-3
Gate Charge (Qg) (Max) @ Vgs :13 nC @ 20 V
Rds On (Max) @ Id, Vgs :1.1Ohm @ 2A, 20V
FET Type :N-Channel
Drive Voltage (Max Rds On, Min Rds On) :20V
Package :Tube
Drain to Source Voltage (Vdss) :1700 V
Vgs (Max) :+25V, -10V
Product Status :Active
Input Capacitance (Ciss) (Max) @ Vds :191 pF @ 1000 V
Mounting Type :Through Hole
Series :Z-FET™
Supplier Device Package :TO-247-3
Mfr :Wolfspeed, Inc.
Current - Continuous Drain (Id) @ 25°C :4.9A (Tc)
Power Dissipation (Max) :69W (Tc)
Technology :SiCFET (Silicon Carbide)
Base Product Number :C2M1000170
Description :SICFET N-CH 1700V 4.9A TO247-3
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