Beijing Silk Road Enterprise Management Services Co.,LTD

Beijing Silk Road Enterprise Management Services Co.,LTD

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FDP025N06

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FDP025N06

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Category :Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature :-
Vgs(th) (Max) @ Id :4.5V @ 250µA
Operating Temperature :-55°C ~ 175°C (TJ)
Package / Case :TO-220-3
Gate Charge (Qg) (Max) @ Vgs :226 nC @ 10 V
Rds On (Max) @ Id, Vgs :2.5mOhm @ 75A, 10V
FET Type :N-Channel
Drive Voltage (Max Rds On, Min Rds On) :10V
Package :Tube
Drain to Source Voltage (Vdss) :60 V
Vgs (Max) :±20V
Product Status :Active
Input Capacitance (Ciss) (Max) @ Vds :14885 pF @ 25 V
Mounting Type :Through Hole
Series :PowerTrench®
Supplier Device Package :TO-220-3
Mfr :onsemi
Current - Continuous Drain (Id) @ 25°C :120A (Tc)
Power Dissipation (Max) :395W (Tc)
Technology :MOSFET (Metal Oxide)
Base Product Number :FDP025
Description :MOSFET N-CH 60V 120A TO220-3
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N-Channel 60 V 120A (Tc) 395W (Tc) Through Hole TO-220-3
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