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Category :Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature :-
Vgs(th) (Max) @ Id :3V @ 250µA
Operating Temperature :-55°C ~ 150°C (TJ)
Package / Case :8-PowerVDFN
Gate Charge (Qg) (Max) @ Vgs :14.9 nC @ 10 V
Rds On (Max) @ Id, Vgs :122mOhm @ 3.3A, 10V
FET Type :N-Channel
Drive Voltage (Max Rds On, Min Rds On) :4.5V, 10V
Package :Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss) :100 V
Vgs (Max) :±20V
Product Status :Active
Input Capacitance (Ciss) (Max) @ Vds :870.7 pF @ 25 V
Mounting Type :Surface Mount
Series :-
Supplier Device Package :PowerDI3333-8
Mfr :Diodes Incorporated
Current - Continuous Drain (Id) @ 25°C :2.9A (Ta), 8.5A (Tc)
Power Dissipation (Max) :940mW (Ta)
Technology :MOSFET (Metal Oxide)
Base Product Number :DMN10
Description :MOSFET N-CH 100V PWRDI3333
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