Beijing Silk Road Enterprise Management Services Co.,LTD

Beijing Silk Road Enterprise Management Services Co.,LTD

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IRFH8318TRPBF

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IRFH8318TRPBF

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Category :Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature :-
Vgs(th) (Max) @ Id :2.35V @ 50µA
Operating Temperature :-55°C ~ 150°C (TJ)
Package / Case :8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs :41 nC @ 10 V
Rds On (Max) @ Id, Vgs :3.1mOhm @ 20A, 10V
FET Type :N-Channel
Drive Voltage (Max Rds On, Min Rds On) :4.5V, 10V
Package :Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss) :30 V
Vgs (Max) :±20V
Product Status :Active
Input Capacitance (Ciss) (Max) @ Vds :3180 pF @ 10 V
Mounting Type :Surface Mount
Series :HEXFET®
Supplier Device Package :PQFN (5x6)
Mfr :Infineon Technologies
Current - Continuous Drain (Id) @ 25°C :27A (Ta), 120A (Tc)
Power Dissipation (Max) :3.6W (Ta), 59W (Tc)
Technology :MOSFET (Metal Oxide)
Base Product Number :IRFH8318
Description :MOSFET N-CH 30V 27A/120A PQFN
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N-Channel 30 V 27A (Ta), 120A (Tc) 3.6W (Ta), 59W (Tc) Surface Mount PQFN (5x6)
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