Beijing Silk Road Enterprise Management Services Co.,LTD

Beijing Silk Road Enterprise Management Services Co.,LTD

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SQJA60EP-T1_BE3

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SQJA60EP-T1_BE3

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Category :Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature :-
Vgs(th) (Max) @ Id :2.5V @ 250µA
Operating Temperature :-55°C ~ 175°C (TJ)
Package / Case :PowerPAK® SO-8 Dual
Gate Charge (Qg) (Max) @ Vgs :30 nC @ 10 V
Rds On (Max) @ Id, Vgs :12.5mOhm @ 8A, 10V
FET Type :N-Channel
Drive Voltage (Max Rds On, Min Rds On) :4.5V, 10V
Package :Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss) :60 V
Vgs (Max) :±20V
Product Status :Active
Input Capacitance (Ciss) (Max) @ Vds :1600 pF @ 25 V
Mounting Type :Surface Mount
Series :Automotive, AEC-Q101, TrenchFET®
Supplier Device Package :PowerPAK® SO-8 Dual
Mfr :Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C :30A (Tc)
Power Dissipation (Max) :45W (Tc)
Technology :MOSFET (Metal Oxide)
Base Product Number :SQJA60
Description :MOSFET N-CH 60V 30A POWERPAKSO-8
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N-Channel 60 V 30A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8 Dual
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