Ask Latest Price
Video Channel
Category :Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature :-
Vgs(th) (Max) @ Id :2.8V @ 1mA
Operating Temperature :-55°C ~ 175°C (TJ)
Package / Case :TO-247-3
Gate Charge (Qg) (Max) @ Vgs :232 nC @ 20 V
Rds On (Max) @ Id, Vgs :31mOhm @ 40A, 20V
FET Type :N-Channel
Drive Voltage (Max Rds On, Min Rds On) :20V
Package :Tube
Drain to Source Voltage (Vdss) :1200 V
Vgs (Max) :+25V, -10V
Product Status :Active
Input Capacitance (Ciss) (Max) @ Vds :3020 pF @ 1000 V
Mounting Type :Through Hole
Series :-
Supplier Device Package :TO-247-3
Mfr :Microchip Technology
Current - Continuous Drain (Id) @ 25°C :103A (Tc)
Power Dissipation (Max) :500W (Tc)
Technology :SiCFET (Silicon Carbide)
Base Product Number :MSC025
Description :SICFET N-CH 1.2KV 103A TO247-3
more