2SC5551AE-TD-E
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Transistor Polarity :NPN
Product Category :Bipolar Transistors - BJT
Mounting Style :SMD/SMT
Maximum DC Collector Current :300 mA
Collector- Emitter Voltage VCEO Max :30 V
Package / Case :PCP-3
Maximum Operating Temperature :+ 150 C
Gain Bandwidth Product fT :3.5 GHz
Configuration :Single
Collector- Base Voltage VCBO :40 V
Series :2SC5551A
Emitter- Base Voltage VEBO :2 V
Collector-Emitter Saturation Voltage :0.3 V
Manufacturer :onsemi
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The 2SC5551AE-TD-E,from onsemi,is Bipolar Transistors - BJT.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!