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Product Category :MOSFET
Vgs (Max) :±30V
Current - Continuous Drain (Id) @ 25°C :83A (Tc)
FET Type :N-Channel
Mounting Type :Through Hole
Gate Charge (Qg) (Max) @ Vgs :107nC @ 10V
Manufacturer :Infineon Technologies
Minimum Quantity :150
Drive Voltage (Max Rds On, Min Rds On) :10V
Operating Temperature :-40°C ~ 175°C (TJ)
FET Feature :-
Series :HEXFET®
Input Capacitance (Ciss) (Max) @ Vds :4530pF @ 25V
Supplier Device Package :TO-262
Part Status :Obsolete
Packaging :Tube
Rds On (Max) @ Id, Vgs :15 mOhm @ 33A, 10V
Power Dissipation (Max) :330W (Tc)
Package / Case :TO-262-3 Long Leads, I²Pak, TO-262AA
Technology :MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id :5V @ 250µA
Drain to Source Voltage (Vdss) :150V
Description :MOSFET N-CH 150V 83A TO-262
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