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Product Category :MOSFET
Vgs (Max) :±8V
Current - Continuous Drain (Id) @ 25°C :16A (Ta)
FET Type :P-Channel
Mounting Type :Surface Mount
Gate Charge (Qg) (Max) @ Vgs :91nC @ 4.5V
Manufacturer :Infineon Technologies
Drive Voltage (Max Rds On, Min Rds On) :1.8V, 4.5V
Operating Temperature :-55°C ~ 150°C (TJ)
FET Feature :-
Series :HEXFET®
Input Capacitance (Ciss) (Max) @ Vds :8676pF @ 10V
Supplier Device Package :8-SO
Packaging :Tube
Rds On (Max) @ Id, Vgs :7 mOhm @ 16A, 4.5V
Power Dissipation (Max) :2.5W (Ta)
Package / Case :8-SOIC (0.154", 3.90mm Width)
Technology :MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id :900mV @ 250µA
Drain to Source Voltage (Vdss) :12V
Description :MOSFET P-CH 12V 16A 8-SOIC
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