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Product Category :MOSFET
Vgs (Max) :±16V
Current - Continuous Drain (Id) @ 25°C :55A (Tc)
FET Type :N-Channel
Mounting Type :Through Hole
Gate Charge (Qg) (Max) @ Vgs :140nC @ 5V
Manufacturer :Infineon Technologies
Minimum Quantity :50
Drive Voltage (Max Rds On, Min Rds On) :4V, 10V
Operating Temperature :-55°C ~ 175°C (TJ)
FET Feature :-
Series :HEXFET®
Input Capacitance (Ciss) (Max) @ Vds :3700pF @ 25V
Supplier Device Package :TO-262
Part Status :Obsolete
Packaging :Tube
Rds On (Max) @ Id, Vgs :26 mOhm @ 29A, 10V
Power Dissipation (Max) :3.8W (Ta), 200W (Tc)
Package / Case :TO-262-3 Long Leads, I²Pak, TO-262AA
Technology :MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id :2V @ 250µA
Drain to Source Voltage (Vdss) :100V
Description :MOSFET N-CH 100V 55A TO-262
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