Beijing Silk Road Enterprise Management Services Co.,LTD

Beijing Silk Road Enterprise Management Services Co.,LTD

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IPD042P03L3GATMA1

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IPD042P03L3GATMA1

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Product Category :MOSFET
Vgs (Max) :±20V
Current - Continuous Drain (Id) @ 25°C :70A (Tc)
FET Type :P-Channel
Mounting Type :Surface Mount
Gate Charge (Qg) (Max) @ Vgs :175nC @ 10V
Manufacturer :Infineon Technologies
Minimum Quantity :2500
Drive Voltage (Max Rds On, Min Rds On) :4.5V, 10V
Operating Temperature :-55°C ~ 175°C (TJ)
FET Feature :-
Series :OptiMOS™
Input Capacitance (Ciss) (Max) @ Vds :12400pF @ 15V
Supplier Device Package :PG-TO252-3
Part Status :Active
Packaging :Tape & Reel (TR)
Rds On (Max) @ Id, Vgs :4.2 mOhm @ 70A, 10V
Power Dissipation (Max) :150W (Tc)
Package / Case :TO-252-3, DPak (2 Leads + Tab), SC-63
Technology :MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id :2V @ 270µA
Drain to Source Voltage (Vdss) :30V
Description :MOSFET P-CH 30V 70A TO252-3
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The IPD042P03L3GATMA1,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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