Product Category :MOSFET
Vgs (Max) :±25V
Current - Continuous Drain (Id) @ 25°C :28A (Tc)
FET Type :N-Channel
Mounting Type :Through Hole
Gate Charge (Qg) (Max) @ Vgs :62.5nC @ 10V
Manufacturer :STMicroelectronics
Minimum Quantity :1
Drive Voltage (Max Rds On, Min Rds On) :10V
Operating Temperature :150°C (TJ)
FET Feature :-
Series :MDmesh™ V
Input Capacitance (Ciss) (Max) @ Vds :2700pF @ 100V
Supplier Device Package :TO-220
Part Status :Active
Packaging :Tube
Rds On (Max) @ Id, Vgs :110 mOhm @ 14A, 10V
Power Dissipation (Max) :190W (Tc)
Package / Case :TO-220-3
Technology :MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id :5V @ 250µA
Drain to Source Voltage (Vdss) :650V
Description :MOSFET N-CH 650V 28A TO-220
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