IXGK35N120B
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Product Category :IGBT Transistors
Mounting Style :Through Hole
Collector- Emitter Voltage VCEO Max :1200 V
Package / Case :TO-264-3
Maximum Operating Temperature :+ 150 C
Maximum Gate Emitter Voltage :20 V
Packaging :Tube
Configuration :Single
Collector-Emitter Saturation Voltage :3.3 V
Manufacturer :IXYS
Description :IGBT Transistors 70 Amps 1200V 3.3 V Rds
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The IXGK35N120B,from IXYS,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!