Beijing Silk Road Enterprise Management Services Co.,LTD

Beijing Silk Road Enterprise Management Services Co.,LTD

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2SK3666-3-TB-E

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2SK3666-3-TB-E

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Transistor Polarity :N-Channel
Vgs - Gate-Source Breakdown Voltage :- 30 V
Product Category :JFET
Mounting Style :SMD/SMT
Id - Continuous Drain Current :10 mA
Drain-Source Current at Vgs=0 :3 mA
Pd - Power Dissipation :200 mW
Package / Case :SC-59-3
Maximum Operating Temperature :+ 150 C
Vds - Drain-Source Breakdown Voltage :30 V
Packaging :Reel
Configuration :Single
Series :2SK3666
Rds On - Drain-Source Resistance :200 Ohms
Manufacturer :onsemi
Description :JFET SWITCHING DEVICE
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The 2SK3666-3-TB-E,from onsemi,is JFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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