Beijing Silk Road Enterprise Management Services Co.,LTD

Beijing Silk Road Enterprise Management Services Co.,LTD

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TGF2979-SM

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TGF2979-SM

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Transistor Polarity :N-Channel
Technology :GaN SiC
Product Category :RF JFET Transistors
Mounting Style :SMD/SMT
Gain :11 dB
Transistor Type :HEMT
Output Power :22 W
Package / Case :QFN-20
Maximum Operating Temperature :+ 225 C
Vds - Drain-Source Breakdown Voltage :32 V
Packaging :Tray
Id - Continuous Drain Current :1.8 A
Vgs - Gate-Source Breakdown Voltage :- 2.7 V
Pd - Power Dissipation :49 W
Manufacturer :Qorvo
Description :RF JFET Transistors 8-12GHz 25W GaN PAE 50% Gain 11dB
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The TGF2979-SM,from Qorvo,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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