ATF-36163-TR1G
Vgs - Gate-Source Breakdown Voltage :- 3 V
Technology :GaAs
Product Category :RF JFET Transistors
Mounting Style :SMD/SMT
Gain :10 dB
Transistor Type :pHEMT
Pd - Power Dissipation :180 mW
Package / Case :SOT-363
Maximum Operating Temperature :+ 150 C
Vds - Drain-Source Breakdown Voltage :3 V
Packaging :Reel
Id - Continuous Drain Current :40 mA
Manufacturer :Avago / Broadcom
Description :RF JFET Transistors Transistor GaAs High Frequency
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The ATF-36163-TR1G,from Avago / Broadcom,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!