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PTFA212001E V4

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PTFA212001E V4

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Transistor Polarity :N-Channel
Technology :Si
Product Category :RF MOSFET Transistors
Mounting Style :SMD/SMT
Gain :15.8 dB
Output Power :200 W
Package / Case :H-36260-2
Maximum Operating Temperature :+ 150 C
Vds - Drain-Source Breakdown Voltage :65 V
Packaging :Tray
Id - Continuous Drain Current :1.6 A
Rds On - Drain-Source Resistance :50 mOhms
Manufacturer :Infineon Technologies
Description :RF MOSFET Transistors RFP-LDMOS GOLDMOS 8
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The PTFA212001E V4,from Infineon Technologies,is RF MOSFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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